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Transistor 50T65FD1 SGT50T65FD1 50T65 Igbt 650v 50A
Features
-High Speed Switching & Low Power Loss
-VCE(sat) = 1.85V at IC = 50A
-Eoff = 0.55mJ at TC = 25°C
-High Input Impedance
-trr = 80ns (typ.) at diF/dt = 1000A/ micros
-Maximum junction temperature 175°C
Applications
-PFC
-UPS
-PV Inverter
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