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K10a60d Tk10a60d Transistor N 600v 10a To-220 Original
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Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220SIS-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 10 A
Rds On – Drain-Source Resistance: 750 mOhms
Vgs th – Gate-Source Threshold Voltage: 2 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 25 nC
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 45 W
Channel Mode: Enhancement
Tradename: DTMOSIV
Height: 15 mm
Length: 10 mm
Series: TK10A60D
Transistor Type: 1 N-Channel
Type: Field Effect Transistor Silicon N Channel MOS Type
Width: 4.5 mm
Brand: Toshiba
Forward Transconductance – Min: 1.5 S
Fall Time: 15 ns
Rise Time: 22 ns
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 55 ns
Unit Weight: 6 g
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