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FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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